职位 ID
240006GQ
职位类别
Engineering
职位类型
Regular
职位描述
About TI
Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world’s brightest minds, TI creates innovations that shape the future of technology. TI is helping about 100,000 customers transform the future, today. We’re committed to building a better future – from the responsible manufacturing of our semiconductors, to caring for our employees, to giving back inside our communities and developing great minds. Put your talent to work with us – change the world, love your job!
About the job
This process integration engineer position is focused on development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI’s advanced technology development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. Experience in development of GaN devices for normally-off operation is desired. The scope of the job includes, but not limited to:
- GaN device simulations (TCAD), device design, layout
- Fabrication flow development and characterization of GaN devices
- Collaboration with fab/manufacturing engineers to ensure device manufacturability
- Collaboration with reliability engineers to meet device reliability requirements
The ideal candidate is expected to have a strong understanding of the following:
- High voltage power FETs and other relevant semiconductor device physics
- Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
- Electrical and materials characterization methodologies and statistical data analysis
Strong hands-on lab experience and excellent problem solving skills are also needed. Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams.
Minimum requirements:
- Masters in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
- 3 years of experience working on GaN-based electronic device development
Preferred qualifications:
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PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
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5+ years of experience in GaN-based electronic device development
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Experience in normally-off GaN device development for high power switching applications
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Demonstrated strong analytical and problem solving skills
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Strong verbal and written communication skills
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Ability to work in teams and collaborate effectively with people in different functions
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Strong time management skills that enable on-time project delivery
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Demonstrated ability to build strong, influential relationships
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Ability to work effectively in a fast-paced and rapidly changing environment
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Ability to take the initiative and drive for results
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Sound decision-making capabilities and the ability to prioritize tasks and adapt accordingly
Texas Instruments is an equal opportunity employer and supports a diverse, inclusive work environment. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, disability, genetic information, national origin, gender, gender identity and expression, age, sexual orientation, marital status, veteran status, or any other characteristic protected by federal, state, or local laws.
If you are interested in this position, please apply to this requisition.